The precise dependence of resolution on thickness was found to vary differently depending on the specific elements involved. In the case of a thin Au film of 20 nm, the best resolution obtained was 9 nm whereas for a 100 nm Au film the best resolution was 66 nm. In the present study, the so-called physical resolution of a typical t-EBSD set-up was determined with the use of Monte Carlo simulations and confronted to experimental findings. The resolution depends critically on intrinsic factors such as the density, atomic number and thickness of the specimen but also on the extrinsic experimental set-up of the electron beam voltage, specimen tilt and detector position. The work presented aims at determining the optimum physical resolution of the transmission-electron backscattered diffraction (t-EBSD) technique. BKDPs included in the paper are zincblende (ZnS), silicon, germanium, GaAs, chalcopyrite (CuFeS2), TaTe4 and Er2Ge2O7. Anomalous effects in BKDPs are analyzed in detail and ways of identifying anomalous contrast in practice are discussed. Examples of the use of theoretical contrast in pattern interpretation are provided. Some important characteristics of diffraction contrast in BKDPs are analyzed with respect to the geometry of the technique, the dynamical theory of electron diffraction and crystallographic applications. Essential crystallography is discussed and methods of analysis of BKDPs to extract crystallographic information are analyzed in detail. The geometrical configurations of BKDPs are reviewed in detail and the relationship between BKDPs and the technique of electron channelling patterns (ECPs) is explored briefly. Orientation microscopy is discussed but not reviewed. The paper focuses mainly on the crystallographic applications of the technique, including discussions on point group and space group determination and strain analysis. The technique of electron backscatter Kikuchi diffraction patterns (BKDPs) in the scanning electron microscope is reviewed.
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